MOLECULAR-DYNAMICS SIMULATIONS OF IMPLANTATION DAMAGE AND RECOVERY IN SEMICONDUCTORS

被引：43

作者：

SAYED, M ^{[1
]}

JEFFERSON, JH ^{[1
]}

WALKER, AB ^{[1
]}

CULLIS, AG ^{[1
]}

机构：

[1] UNIV E ANGLIA,SCH PHYS,NORWICH NR4 7TJ,NORFOLK,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 102卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)00279-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Numerous experiments on damage in semiconductors due to ion bombardment have shown quite varied material-dependent behaviour. In particular after the recovery phase, the residual damage can vary from almost crystalline to amorphous for given ion bombardment conditions [1]. We have studied both the initial cascade damage and the subsequent recovery using approximate and full molecular dynamics techniques for Si, GaAs and AlAs. These semiconductors are modelled using the Si Tersoff potential which has been modified for GaAs and AlAs. In this presentation, the results of these simulations will be given. These clearly show that AlAs sustains less damage than GaAs, in agreement with experiment.

引用

页码：218 / 222

页数：5

共 8 条

[1] MATERIAL-DEPENDENT AMORPHIZATION AND EPITAXIAL CRYSTALLIZATION IN ION-IMPLANTED ALAS/GAAS LAYER STRUCTURES [J].