FINITE-ELEMENT MODELING AND X-RAY-MEASUREMENT OF STRAIN IN PASSIVATED AL LINES DURING THERMAL CYCLING

被引：21

作者：

BESSER, PR ^{[1
]}

MACK, AS ^{[1
]}

FRASER, DB ^{[1
]}

BRAVMAN, JC ^{[1
]}

机构：

[1] INTEL CORP,COMPONENTS RES,SANTA CLARA,CA 95051

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 06期

关键词：

D O I：

10.1149/1.2221639

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Narrow-pitch encapsulated Al lines are used as interconnect metallization in integrated circuits. We have measured the principal strain state of Al alloy lines passivated with silicon nitride directly as a function of temperature. We compare these results with calculations of the strain state in these lines using finite-element modeling. The measured strain-temperature behavior shows good fundamental agreement with finite-element modeling, although the magnitude of the strains measured with x-rays is less than that predicted by modeling due to voiding in the lines.

引用

页码：1769 / 1772

页数：4

共 24 条

[11] STRESS IN METAL LINES UNDER PASSIVATION - COMPARISON OF EXPERIMENT WITH FINITE-ELEMENT CALCULATIONS [J].

GREENEBAUM, B ;

SAUTER, AI ;

FLINN, PA ;

NIX, WD .

APPLIED PHYSICS LETTERS, 1991, 58 (17) :1845-1847

[12] VOID FORMATION MECHANISM IN VLSI ALUMINUM METALLIZATION [J].

HINODE, K ;

ASANO, I ;

HOMMA, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (06) :1050-1055

[13]

JAMES MR, 1980, TREATISE MATERIALS A, V19, P1

[14]

MADDEN MC, 1992, MATER RES SOC SYMP P, V265, P33, DOI 10.1557/PROC-265-33

[15]

RADLER MJ, 1992, MRS S P, V264

[16] THERMAL-STRESSES IN ALUMINUM LINES BONDED TO SUBSTRATES [J].

SAUTER, AI ;

NIX, WD .

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1992, 15 (04) :594-600

[17]

Segmuller A., 1988, TREATISE MAT SCI TEC, P143, DOI [10.1016/ B978-0-12-341827-2.50010-8, DOI 10.1016/B978-0-12-341827-2.50010-8]

[18] STRAIN GRADIENTS IN AL-2-PERCENT CU THIN-FILMS [J].

SHUTE, CJ ;

COHEN, JB .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (04) :2104-2110

[19]

Tezaki A., 1990, 28th Annual Proceedings. Reliability Physics 1990 (Cat. No.90CH2787-0), P221, DOI 10.1109/RELPHY.1990.66090

[20]

VASSAMILLET LF, 1963, ADVAN XRAY ANAL, V6, P142

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