CATALYTIC NITRIDATION OF A III-V SEMICONDUCTOR USING ALKALI-METAL

被引：15
作者：
SOUKIASSIAN, P
KENDELEWICZ, T
STARNBERG, HI
BAKSHI, MH
HURYCH, Z
机构：
[1] UNIV PARIS 11,DEPT PHYS,F-91405 ORSAY,FRANCE
[2] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
[3] CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN
[4] NO ILLINOIS UNIV,DEPT PHYS,DE KALB,IL 60115
来源：
EUROPHYSICS LETTERS | 1990年 / 12卷 / 01期
关键词：
D O I：
10.1209/0295-5075/12/1/016
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The room temperature adsorption of molecular nitrogen on a InP(110) surface modified by a potassium overlayer is investigated by means of valence band and core level photoemission spectroscopy using synchrotron radiation. The results indicate no reaction between N2 and the clean InP(110), while the potassium-covered surface exhibits nitrogen uptake. Chemical shift at the P 21, core level suggests bonding with the anion and formation of InPN, nitride complex. In strong contrast with alkali-promoted silicon surfaces, reaction between potassium and the surface is found to be essential for the catalytic nitridation which is an indication of the role of defects. This study brings the fist example of catalytic nitridation of a III-V semiconductor. © 1990 IOP Publishing Ltd.
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页码：87 / 92
页数：6
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