HIGH-SPEED, HIGH BREAKDOWN VOLTAGE INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOMBE

被引：2
|
作者：
CHAU, HF [1 ]
BEAM, EA [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,CENT RES LAB,DALLAS,TX 75265
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 11期
关键词：
D O I：
10.1109/16.239796
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：2121 / 2121
页数：1
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