THE DETERMINATION OF MBE GROWTH MECHANISMS USING DYNAMIC RHEED TECHNIQUES

被引:41
作者
JOYCE, BA [1 ]
DOBSON, PJ [1 ]
NEAVE, JH [1 ]
ZHANG, J [1 ]
机构
[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT PHYS,LONDON SW7 2AZ,ENGLAND
关键词
D O I
10.1016/0039-6028(86)90378-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:1 / 9
页数:9
相关论文
共 24 条
[1]   MULTINUCLEAR GROWTH OF DISLOCATION-FREE PLANES IN ELECTROCRYSTALLIZATION [J].
BOSTANOV, V ;
BUDEVSKI, E ;
ROUSSINOVA, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) :1346-+
[2]   POSITIONS OF THE SUB-BAND MINIMA IN GAAS-(ALGA)AS QUANTUM WELL HETEROSTRUCTURES [J].
DAWSON, P ;
DUGGAN, G ;
RALPH, HI ;
WOODBRIDGE, K ;
THOOFT, GW .
SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (03) :231-235
[3]  
DOBSON PJ, UNPUB
[4]   MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY [J].
GHAISAS, SV ;
MADHUKAR, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :540-546
[5]   HE SCATTERING STUDY OF THE NUCLEATION AND GROWTH OF CU(100) FROM ITS VAPOR [J].
GOMEZ, LJ ;
BOURGEAL, S ;
IBANEZ, J ;
SALMERON, M .
PHYSICAL REVIEW B, 1985, 31 (04) :2551-2553
[6]   EPITAXY OF SI(111) AS STUDIED WITH A NEW HIGH RESOLVING LEED SYSTEM [J].
GRONWALD, KD ;
HENZLER, M .
SURFACE SCIENCE, 1982, 117 (1-3) :180-187
[7]   ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DATA FROM RECONSTRUCTED SEMICONDUCTOR SURFACES [J].
JOYCE, BA ;
NEAVE, JH ;
DOBSON, PJ ;
LARSEN, PK .
PHYSICAL REVIEW B, 1984, 29 (02) :814-819
[8]   DYNAMIC EFFECTS IN RHEED FROM MBE GROWN GAAS(001) SURFACES [J].
LARSEN, PK ;
DOBSON, PJ ;
NEAVE, JH ;
JOYCE, BA ;
BOLGER, B ;
ZHANG, J .
SURFACE SCIENCE, 1986, 169 (01) :176-196
[9]   DIFFRACTION FROM STEPPED SURFACES .1. REVERSIBLE SURFACES [J].
LENT, CS ;
COHEN, PI .
SURFACE SCIENCE, 1984, 139 (01) :121-154
[10]   RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100) [J].
LEWIS, BF ;
LEE, TC ;
GRUNTHANER, FJ ;
MADHUKAR, A ;
FERNANDEZ, R ;
MASERJIAN, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :419-424