A SUBMICROMETER MEGABIT DRAM PROCESS TECHNOLOGY USING TRENCH CAPACITORS

被引：2

作者：

NAKAJIMA, S

MINEGISHI, K

MIURA, K

MORIE, T

KIMIZUKA, M

MANO, T

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1985年 / 20卷 / 01期

关键词：

D O I：

10.1109/JSSC.1985.1052285

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：130 / 136

页数：7

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