ATTENUATION COMPENSATION IN DISTRIBUTED-AMPLIFIER DESIGN

被引：39

作者：

DEIBELE, S ^{[1
]}

BEYER, JB ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT ELECT & COMP ENGN,MADISON,WI 53706

来源：

关键词：

D O I：

10.1109/22.32227

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1425 / 1433

页数：9

共 14 条

[1] A MONOLITHIC GAAS 1-13-GHZ TRAVELING-WAVE AMPLIFIER
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MOZZI, RL
VORHAUS, JL
REYNOLDS, LD
PUCEL, RA
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) : 976 - 981
[2] MONOLITHIC 2-20 GHZ GAAS TRAVELING-WAVE AMPLIFIER
AYASLI, Y
REYNOLDS, LD
VORHAUS, JL
HANES, L
[J]. ELECTRONICS LETTERS, 1982, 18 (14) : 596 - 598
[3] A 2-20 GHZ HIGH-GAIN MONOLITHIC HEMT DISTRIBUTED-AMPLIFIER
BANDY, SG
NISHIMOTO, CK
YUEN, C
LARUE, RA
DAY, M
ECKSTEIN, J
TAN, ZCH
WEBB, C
ZDASIUK, GA
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1987, 35 (12) : 1494 - 1500
[4] ON GAIN-BANDWIDTH PRODUCT FOR DISTRIBUTED-AMPLIFIERS
BECKER, RC
BEYER, JB
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1986, 34 (06) : 736 - 738
[5] MESFET DISTRIBUTED-AMPLIFIER DESIGN GUIDELINES
BEYER, JB
PRASAD, SN
BECKER, RC
NORDMAN, JE
HOHENWARTER, GK
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (03) : 268 - 275
[6] BEYER JB, 1983, ECE836 U WISC MAD
[7] CHASE EM, 1986 IEEE MTTS INT M, P811
[8] KEENAN W, 1984, IEEE T ELECTRON DEV, V31, P1926
[9] Kim B., 1985, IEEE 1985 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers (Cat. No.85CH2191-5), P35
[10] 0.5 W 2-21 GHZ MONOLITHIC GAAS DISTRIBUTED-AMPLIFIER
KIM, B
TSERNG, HQ
[J]. ELECTRONICS LETTERS, 1984, 20 (07) : 288 - 289