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OXIDATION INDUCED STRESSES AND SOME EFFECTS ON THE BEHAVIOR OF OXIDE-FILMS
被引:116
作者
:
HSUEH, CH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT MAT SCI & MINERAL ENGN, BERKELEY, CA 94720 USA
UNIV CALIF BERKELEY, DEPT MAT SCI & MINERAL ENGN, BERKELEY, CA 94720 USA
HSUEH, CH
[
1
]
EVANS, AG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT MAT SCI & MINERAL ENGN, BERKELEY, CA 94720 USA
UNIV CALIF BERKELEY, DEPT MAT SCI & MINERAL ENGN, BERKELEY, CA 94720 USA
EVANS, AG
[
1
]
机构
:
[1]
UNIV CALIF BERKELEY, DEPT MAT SCI & MINERAL ENGN, BERKELEY, CA 94720 USA
来源
:
JOURNAL OF APPLIED PHYSICS
|
1983年
/ 54卷
/ 11期
关键词
:
D O I
:
10.1063/1.331854
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:6672 / 6686
页数:15
相关论文
共 19 条
[1]
CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES
[J].
BRANTLEY, WA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS, MURRAY HILL, NJ 07974 USA
BELL LABS, MURRAY HILL, NJ 07974 USA
BRANTLEY, WA
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(01)
:534
-535
[2]
FLAWS IN SIDEWALL OXIDES GROWN ON POLYSILICON GATE
[J].
BROWN, DK
论文数:
0
引用数:
0
h-index:
0
BROWN, DK
;
HU, SM
论文数:
0
引用数:
0
h-index:
0
HU, SM
;
MORRISSEY, JM
论文数:
0
引用数:
0
h-index:
0
MORRISSEY, JM
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(05)
:1084
-1089
[3]
CHIN D, UNPUB
[4]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
:3770
-&
[5]
VISCOUS-FLOW OF THERMAL SIO2
[J].
EERNISSE, EP
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
EERNISSE, EP
.
APPLIED PHYSICS LETTERS,
1977,
30
(06)
:290
-293
[6]
STRESS IN THERMAL SIO2 DURING GROWTH
[J].
EERNISSE, FP
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
EERNISSE, FP
.
APPLIED PHYSICS LETTERS,
1979,
35
(01)
:8
-10
[7]
EVANS AG, INT J SOLIDS STRUCTU
[8]
MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE
[J].
JACCODINE, RJ
论文数:
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引用数:
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JACCODINE, RJ
;
SCHLEGEL, WA
论文数:
0
引用数:
0
h-index:
0
SCHLEGEL, WA
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(06)
:2429
-+
[9]
TEMPERATURE-DEPENDENCE OF THE INTERNAL MECHANICAL STRESSES IN THE SI-SIO2 SYSTEM
[J].
JAROSZ, M
论文数:
0
引用数:
0
h-index:
0
JAROSZ, M
;
KOCSANYI, L
论文数:
0
引用数:
0
h-index:
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KOCSANYI, L
;
GIBER, J
论文数:
0
引用数:
0
h-index:
0
GIBER, J
.
APPLIED SURFACE SCIENCE,
1982,
14
(01)
:122
-127
[10]
EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION
[J].
JORGENSEN
论文数:
0
引用数:
0
h-index:
0
JORGENSEN
.
JOURNAL OF CHEMICAL PHYSICS,
1962,
37
(04)
:874
-&
←
1
2
→
共 19 条
[1]
CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES
[J].
BRANTLEY, WA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS, MURRAY HILL, NJ 07974 USA
BELL LABS, MURRAY HILL, NJ 07974 USA
BRANTLEY, WA
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(01)
:534
-535
[2]
FLAWS IN SIDEWALL OXIDES GROWN ON POLYSILICON GATE
[J].
BROWN, DK
论文数:
0
引用数:
0
h-index:
0
BROWN, DK
;
HU, SM
论文数:
0
引用数:
0
h-index:
0
HU, SM
;
MORRISSEY, JM
论文数:
0
引用数:
0
h-index:
0
MORRISSEY, JM
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(05)
:1084
-1089
[3]
CHIN D, UNPUB
[4]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
:3770
-&
[5]
VISCOUS-FLOW OF THERMAL SIO2
[J].
EERNISSE, EP
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
EERNISSE, EP
.
APPLIED PHYSICS LETTERS,
1977,
30
(06)
:290
-293
[6]
STRESS IN THERMAL SIO2 DURING GROWTH
[J].
EERNISSE, FP
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
EERNISSE, FP
.
APPLIED PHYSICS LETTERS,
1979,
35
(01)
:8
-10
[7]
EVANS AG, INT J SOLIDS STRUCTU
[8]
MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE
[J].
JACCODINE, RJ
论文数:
0
引用数:
0
h-index:
0
JACCODINE, RJ
;
SCHLEGEL, WA
论文数:
0
引用数:
0
h-index:
0
SCHLEGEL, WA
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(06)
:2429
-+
[9]
TEMPERATURE-DEPENDENCE OF THE INTERNAL MECHANICAL STRESSES IN THE SI-SIO2 SYSTEM
[J].
JAROSZ, M
论文数:
0
引用数:
0
h-index:
0
JAROSZ, M
;
KOCSANYI, L
论文数:
0
引用数:
0
h-index:
0
KOCSANYI, L
;
GIBER, J
论文数:
0
引用数:
0
h-index:
0
GIBER, J
.
APPLIED SURFACE SCIENCE,
1982,
14
(01)
:122
-127
[10]
EFFECT OF AN ELECTRIC FIELD ON SILICON OXIDATION
[J].
JORGENSEN
论文数:
0
引用数:
0
h-index:
0
JORGENSEN
.
JOURNAL OF CHEMICAL PHYSICS,
1962,
37
(04)
:874
-&
←
1
2
→