FULL-WAVE MODELING OF VIA HOLE GROUNDS IN MICROSTRIP BY 3-DIMENSIONAL MODE MATCHING TECHNIQUE

被引：29

作者：

SORRENTINO, R ^{[1
]}

ALESSANDRI, F ^{[1
]}

MONGIARDO, M ^{[1
]}

AVITABILE, G ^{[1
]}

ROSELLI, L ^{[1
]}

机构：

[1] UNIV FLORENCE,DIPARTIMENTO INGN ELETTRON,I-50134 FLORENCE,ITALY

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1992年 / 40卷 / 12期

关键词：

D O I：

10.1109/22.179884

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A rigorous full-wave analysis of microstrip via hole grounds is presented using a three-dimensional mode-matching technique in connection with a suitable segmentation of the structure into homogeneous parallelepipedal cells. The adoption of the novel impressed source technique reduces substantially the numerical effort compared to the transverse resonance technique and, in addition to the finite metallization thickness, accounts for possible package interaction. Theoretical results are compared with several experimental data from various sources, including our experiments, showing excellent agreement. Package effects have been observed experimentally and shown to be fully predicted by the theory.

引用

页码：2228 / 2234

页数：7

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