VAPOR-GROWN CW ROOM-TEMPERATURE GAAS-INYGA1-YP LASERS

被引：22

作者：

NUESE, CJ ^{[1
]}

OLSEN, GH ^{[1
]}

ETTENBERG, M ^{[1
]}

机构：

[1] RCA,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 01期

关键词：

D O I：

10.1063/1.88871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：54 / 56

页数：3

共 13 条

[1]

BUTLER JK, 1973, IEEE J QUANTUM ELECT, V9, P281

[2] BEAM DIVERGENCE OF EMISSION FROM DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

CASEY, HC ;

PANISH, MB ;

MERZ, JL .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) :5470-5475

[3] EFFECT OF LATTICE-PARAMETER MISMATH IN NEA GAAS PHOTOCATHODES GROWN ON GAP-INXGA1-XP SUBSTRATES [J].

ENSTROM, RE ;

FISHER, DG .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :1976-1982

[4] INFLUENCE OF GAS-PHASE STOICHIOMETRY ON DEFECT MORPHOLOGY, IMPURITY DOPING, AND ELECTROLUMINESCENCE EFFICIENCY OF VAPOR-GROWN GAAS P-N-JUNCTIONS [J].

ENSTROM, RE ;

NUESE, CJ ;

APPERT, JR ;

GANNON, JJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (11) :1516-1523

[5]

KRESSEL H, 1972, LASER HDB

[6] THERMAL-EXPANSION OF INXGA1-XP ALLOYS [J].

KUDMAN, I ;

PAFF, RJ .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3760-&

[7] ROOM-TEMPERATURE HETEROJUNCTION LASER-DIODES FROM VAPOR-GROWN IN1-XGAXP/GAAS STRUCTURES [J].

NUESE, CJ ;

ETTENBERG, M ;

OLSEN, GH .

APPLIED PHYSICS LETTERS, 1974, 25 (10) :612-614

[8] ROOM-TEMPERATURE HETEROJUNCTION LASER-DIODES OF INXGA1-XAS-INYGA1-YP WITH EMISSION WAVELENGTH BETWEEN 0.9 AND 1.15MU [J].

NUESE, CJ ;

OLSEN, GH .

APPLIED PHYSICS LETTERS, 1975, 26 (09) :528-531

[9] PREPARATION AND PROPERTIES OF VAPOR-GROWN IN 1-XGAXP [J].

NUESE, CJ ;

RICHMAN, D ;

CLOUGH, RB .

METALLURGICAL TRANSACTIONS, 1971, 2 (03) :789-&

[10]

PANISH MB, 1974, APPLIED SOLID STATE, V4

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