INSULATED GATE TUNNEL JUNCTION TRIODE

被引：17
作者：
HOFSTEIN, SR
WARFIELD, G
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1965年 / ED12卷 / 02期
关键词：
D O I：
10.1109/T-ED.1965.15455
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：66 / &
相关论文
共 13 条
[1]  
ATALLA MM, 1962, Patent No. 3045139
[2]   INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J].
CHYNOWETH, AG ;
FELDMANN, WL ;
LEE, CA ;
LOGAN, RA ;
PEARSON, GL ;
AIGRAIN, P .
PHYSICAL REVIEW, 1960, 118 (02) :425-434
[3]   INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1957, 106 (03) :418-426
[4]  
HILIBRAND J, PRIVATE COMMUNICATIO
[5]   SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].
HOFSTEIN, SR ;
HEIMAN, FP .
PROCEEDINGS OF THE IEEE, 1963, 51 (09) :1190-&
[6]  
HOFSTEIN SR, 1964, THESIS PRINCETON U, P17
[7]  
HOFSTEIN SR, TO BE PUBLISHED
[8]   IONIZATION RATES FOR HOLES AND ELECTRONS IN SILICON [J].
MILLER, SL .
PHYSICAL REVIEW, 1957, 105 (04) :1246-1249
[9]  
NATHANSON HC, 1963, OCT IEEE EL DEV M WA
[10]  
NATHANSON HI, PRIVATE COMMUNICATIO
12