TEMPERATURE-DEPENDENCE OF LATTICE VIBRATION-SPECTRA FOR HG1-XZNXTE ALLOYS

被引:2
作者
WU, CC [1 ]
CHU, DY [1 ]
SUN, CY [1 ]
YANG, TR [1 ]
机构
[1] NATL TAIWAN NORMAL UNIV, DEPT PHYS, TAIPEI 117, TAIWAN
关键词
D O I
10.1088/0268-1242/10/4/010
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The far-infrared reflection spectra of Hg1-xZnxTe crystals with various composition x have been measured at temperatures ranging from 90 to 295 K in the wavenumber region of 60 to 450 cm(-1). In all but the pure compounds, HgTe and ZnTe, a two To phonon structure is clearly observed. The optical phonon frequencies are well determined by Kramers-Kronig integrations and dynamic dielectric function fitting. As the temperature is increased, the lattice vibration frequencies of the ZnTe-like optical mode decreases in the composition range x less than or equal to 0.388. A similar situation is found between the temperature dependence of the frequencies of the HgTe-like To lattice vibration mode and the temperature dependence of energy gap. This indicates that there is a correlation between the HgTe lattice vibration mode and the electronic structure of Hg1-xZnxTe alloys. The approaches which concern the temperature dependence of electronic states and lattice vibration in semiconductors are discussed.
引用
收藏
页码:437 / 442
页数:6
相关论文
共 24 条
[1]  
Antoncik E., 1955, CZECH J PHYS, V5, P449
[2]   INFRARED-SPECTROSCOPY OF SOLIDS [J].
BALKANSKI, M .
INFRARED PHYSICS, 1989, 29 (2-4) :729-746
[3]   ELECTRONIC AND TRANSPORT-PROPERTIES OF HGCDTE AND HGZNTE [J].
BERDING, MA ;
KRISHNAMURTHY, S ;
SHER, A ;
CHEN, AB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05) :3014-3018
[4]  
BROPHY JH, 1970, STRUCTURE PROPERTIES, V2, P123
[5]   ELECTRONIC-STRUCTURE OF HG1-XCDX TE ALLOYS AND CHARGE-DENSITY CALCULATIONS USING REPRESENTATIVE K POINTS [J].
CHADI, DJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1973, 7 (02) :692-699
[6]   APPLICATION OF A MODIFIED RANDOM-ELEMENT-ISODISPLACEMENT MODEL TO LONG-WAVELENGTH OPTIC PHONONS OF MIXED CRYSTALS [J].
CHANG, IF ;
MITRA, SS .
PHYSICAL REVIEW, 1968, 172 (03) :924-&
[7]  
COHEN ML, 1980, HDB SEMICONDUCTORS, V2, pCHB4
[8]   DIFFUSION AND HARDNESS STUDIES IN MERCURY ZINC TELLURIDE [J].
FANG, S ;
FARTHING, LJ ;
TANG, MFS ;
STEVENSON, DA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02) :1120-1126
[9]   INTERDIFFUSION COEFFICIENT IN HG1-XZNXTE SOLID-SOLUTIONS [J].
GRANGER, R ;
POBLA, C ;
ROLLAND, S ;
TRIBOULET, R .
JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) :261-265
[10]   INTERBAND MAGNETOREFLECTION OF HG1-XCDXTE [J].
GROVES, SH ;
HARMAN, TC ;
PIDGEON, CR .
SOLID STATE COMMUNICATIONS, 1971, 9 (08) :451-&