PHOTOINDUCED HYDROGEN LOSS FROM POROUS SILICON

被引：110

作者：

COLLINS, RT

TISCHLER, MA

STATHIS, JH

机构：

[1] IBM T. J. Watson Research Center, Yorktown Heights

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 14期

关键词：

D O I：

10.1063/1.108440

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we show that UV illumination of porous silicon causes a decrease ill its luminescence efficiency. Infrared measurements allow us to associate the efficiency decrease with a loss of hydrogen from the silicon surface. We also find that the rate at which the luminescence intensity degrades increases rapidly when the illumination energy exceeds a threshold near 3.0 eV. We conclude that the decrease in photoluminescence efficiency occurs as a result of optically induced hydrogen desorption and discuss possible explanations for the energy threshold.

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页码：1649 / 1651

页数：3

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