ABSENCE OF GROWTH SEQUENCE DEPENDENCE OF ALAS/GAAS HETEROJUNCTION BAND DISCONTINUITY DETERMINED BY X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：7

作者：

OHNO, H

ISHII, H

MATSUZAKI, K

HASEGAWA, H

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(89)90420-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：367 / 370

页数：4

共 6 条

[1] GRANT EA, 1980, PHYS REV LETT, V44, P1620
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KATNANI, AD
MARGARITONDO, G
[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1944 - 1956
[3] COMMUTATIVITY AND TRANSITIVITY OF GAAS-ALAS-GE(100) BAND OFFSETS
KATNANI, AD
BAUER, RS
[J]. PHYSICAL REVIEW B, 1986, 33 (02): : 1106 - 1109
[4] OHNO H, UNPUB
[5] XPS MEASUREMENT OF GAAS-ALAS HETEROJUNCTION BAND DISCONTINUITIES - GROWTH SEQUENCE DEPENDENCE
WALDROP, JR
KOWALCZYK, SP
GRANT, RW
KRAUT, EA
MILLER, DL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 573 - 575
[6] EFFECT OF GROWTH SEQUENCE ON THE BAND DISCONTINUITIES AT ALAS/GAAS (100) AND (110) HETEROJUNCTION INTERFACES
WALDROP, JR
GRANT, RW
KRAUT, EA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1209 - 1214