CHARGE INJECTION TRANSISTOR BASED ON REAL-SPACE HOT-ELECTRON TRANSFER

被引：76
作者：
LURYI, S
KASTALSKY, A
GOSSARD, AC
HENDEL, RH
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 06期
关键词：
D O I：
10.1109/T-ED.1984.21616
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：832 / 839
页数：8
相关论文
共 13 条
[1]   NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J].
ALLYN, CL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1980, 36 (05) :373-376
[2]  
BOZLER CO, 1980, IEEE T ELECTRON DEVI, V27, P619
[3]  
Conwell E M, 1967, HIGH FIELD TRANSPORT
[4]   A FIELD-EFFECT TRANSISTOR WITH A NEGATIVE DIFFERENTIAL RESISTANCE [J].
KASTALSKY, A ;
LURYI, S ;
GOSSARD, AC ;
HENDEL, R .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :57-60
[5]   NOVEL REAL-SPACE HOT-ELECTRON TRANSFER DEVICES [J].
KASTALSKY, A ;
LURYI, S .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) :334-336
[6]   CHARGE INJECTION OVER TRIANGULAR BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES [J].
KAZARINOV, RF ;
LURYI, S .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :810-812
[7]  
KAZARINOV RF, 1982, APPL PHYS A-MATER, V28, P151, DOI 10.1007/BF00617980
[8]  
Littlejohn M. A., 1982, GaInAsP alloy semiconductors, P243
[9]   ON THE THEORY OF THE THERMIONIC EMISSION TRANSISTOR .2. TET AS AN ELEMENT OF LOGIC-CIRCUITS [J].
LURYI, S ;
KAZARINOV, RF .
SOLID-STATE ELECTRONICS, 1982, 25 (09) :933-942
[10]   FIELD-EFFECT TRANSISTOR VERSUS ANALOG TRANSISTOR (STATIC INDUCTION TRANSISTOR) [J].
NISHIZAWA, JI ;
TERASAKI, T ;
SHIBATA, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) :185-197
12