LOW-TEMPERATURE TWO-DIMENSIONAL MOBILITY OF A GAAS HETEROLAYER

[1] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[2] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611

[3] MENDEZ EE, UNPUB

[4] ELECTRON-TRANSPORT IN POLAR HETEROLAYERS [J]. SURFACE SCIENCE, 1982, 113 (1-3) : 199 - 210

[5] TWO-DIMENSIONAL ELECTRON-TRANSPORT IN SEMICONDUCTOR LAYERS .2. SCREENING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 599 - 603

[6] HOT-ELECTRONS IN A GAAS HETEROLAYER AT LOW-TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6863 - 6866

[7] TWO-DIMENSIONAL ELECTRON-TRANSPORT IN SEMICONDUCTOR LAYERS .1. PHONON-SCATTERING [J]. ANNALS OF PHYSICS, 1981, 133 (02) : 217 - 239

[8] PRICE PJ, 1984, B AM PHYS SOC, V29, P472

[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &

[10] POLARIZABILITY OF A 2-DIMENSIONAL ELECTRON GAS [J]. PHYSICAL REVIEW LETTERS, 1967, 18 (14) : 546 - +

[1] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[2] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611

[3] MENDEZ EE, UNPUB

[4] ELECTRON-TRANSPORT IN POLAR HETEROLAYERS [J]. SURFACE SCIENCE, 1982, 113 (1-3) : 199 - 210

[5] TWO-DIMENSIONAL ELECTRON-TRANSPORT IN SEMICONDUCTOR LAYERS .2. SCREENING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 599 - 603

[6] HOT-ELECTRONS IN A GAAS HETEROLAYER AT LOW-TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6863 - 6866

[7] TWO-DIMENSIONAL ELECTRON-TRANSPORT IN SEMICONDUCTOR LAYERS .1. PHONON-SCATTERING [J]. ANNALS OF PHYSICS, 1981, 133 (02) : 217 - 239

[8] PRICE PJ, 1984, B AM PHYS SOC, V29, P472

[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &

[10] POLARIZABILITY OF A 2-DIMENSIONAL ELECTRON GAS [J]. PHYSICAL REVIEW LETTERS, 1967, 18 (14) : 546 - +