SINGLE SILICON ETCHING PROFILE SIMULATION

被引：42
作者：
ARIKADO, T
HORIOKA, K
SEKINE, M
OKANO, H
HORIIKE, Y
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 01期
关键词：
D O I：
10.1143/JJAP.27.95
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：95 / 99
页数：5
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