GROWTH OF HIGH-PURITY GAAS-LAYERS BY MOLECULAR-BEAM EPITAXY

被引：52

作者：

HWANG, JCM

TEMKIN, H

BRENNAN, TM

FRAHM, RE

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 01期

关键词：

D O I：

10.1063/1.93727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：66 / 68

页数：3

共 10 条

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[7] ELECTRON TRANSPORT IN GAAS [J].

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[8]

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[10]

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