IMPURITY DISTRIBUTION IN EPITAXIAL GROWTH

被引：75

作者：

GROVE, AS

RODER, A

SAH, CT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 3P1期

关键词：

D O I：

10.1063/1.1714223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：802 / &

共 17 条

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[7]

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[10] ANOMALOUS IMPURITY DIFFUSION IN EPITAXIAL SILICON NEAR THE SUBSTRATE [J].

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