CHANNELING DEPENDENCE OF ION-BEAM-INDUCED EPITAXIAL RECRYSTALLIZATION IN SILICON

被引：31
作者：
LINNROS, J
HOLMEN, G
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 05期
关键词：
D O I：
10.1063/1.336457
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：1513 / 1517
页数：5
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