RANDOM TELEGRAPH NOISE OF DEEP-SUBMICROMETER MOSFETS

被引：247
|
作者：
HUNG, KK
KO, PK
HU, CM
CHENG, YC
机构：
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
[2] UNIV HONG KONG,DEPT ELECT ENGN,HONG KONG,HONG KONG
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 02期
关键词：
D O I：
10.1109/55.46938
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The random telegraph noise exhibited by deep-submicrometer MOSFET’s with very small channel area (≤1 µm2) at room temperature was studied. Analysis of the amplitude of the current fluctuations reveals that the trapped charges generate noise through modulation of the carrier mobility in addition to the carrier number. Parameters needed for modeling the carrier mobility fluctuation effect on the flicker noise in conventional MOSFET’s have been extracted directly from the random telegraph noise data. © 1990 IEEE
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页码：90 / 92
页数：3
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