HOT-ELECTRON SPECTROSCOPY OF GAAS

被引:127
作者
HAYES, JR [1 ]
LEVI, AFJ [1 ]
WIEGMANN, W [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1103/PhysRevLett.54.1570
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1570 / 1572
页数:3
相关论文
共 4 条
[1]  
FERRY DK, 1982, HDB SEMICONDUCTORS, pCHA11
[2]   CHARGE INJECTION OVER TRIANGULAR BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES [J].
KAZARINOV, RF ;
LURYI, S .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :810-812
[3]   ELECTRON-SCATTERING INTERACTION WITH COUPLED PLASMON-POLAR-PHONON MODES IN DEGENERATE SEMICONDUCTORS [J].
KIM, ME ;
DAS, A ;
SENTURIA, SD .
PHYSICAL REVIEW B, 1978, 18 (12) :6890-6899
[4]  
MALIK RJ, 1980, ELECTRON LETT, V16, P837