THE EFFECT OF STRESS ON THE REDISTRIBUTION OF IMPLANTED IMPURITIES IN GAAS

被引：18
作者：
KASAHARA, J
KATO, Y
ARAI, M
WATANABE, N
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 11期
关键词：
D O I：
10.1149/1.2119568
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2275 / 2279
页数：5
相关论文
共 29 条
[11]   REDISTRIBUTION OF MANGANESE AFTER ANNEALING OF GAAS IMPLANTED WITH SI+ AND SE+ [J].
KANBER, H ;
FENG, M ;
WHELAN, JM .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :960-962
[12]   SUPPRESSION OF THERMAL-CONVERSION IN CR-DOPED SEMI-INSULATING GAAS [J].
KASAHARA, J ;
ARAI, M ;
WATANABE, N .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) :8229-8231
[13]   REDISTRUBUTION OF ZN IMPLANTED INTO GAAS [J].
KASAHARA, J ;
SAKURAI, H ;
KATO, Y ;
WATANABE, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02) :L103-L105
[14]   EFFECT OF ARSENIC PARTIAL-PRESSURE ON CAPLESS ANNEAL OF ION-IMPLANTED GAAS [J].
KASAHARA, J ;
ARAI, M ;
WATANABE, N .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) :1997-2001
[15]  
KASAHARA J, 1982, UNPUB SEMI INSULATIN
[16]  
KIM HB, 1980, P CORNELL C, P121
[17]   THERMAL-CONVERSION OF GAAS [J].
KLEIN, PB ;
NORDQUIST, PER ;
SIEBENMANN, PG .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4861-4869
[18]  
KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927
[19]   DOUBLE-LAYERED ENCAPSULANT FOR ANNEALING ION-IMPLANTED GAAS UP TO 1100DEGREESC [J].
LIDOW, A ;
GIBBONS, JF ;
MAGEE, T .
APPLIED PHYSICS LETTERS, 1977, 31 (03) :158-161
[20]  
NAKAI Y, 1970, OYOBUTSURI, V39, P551
123