HIGH-QUALITY INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：46

作者：

TSANG, WT

MILLER, RC

CAPASSO, F

BONNER, WA

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 05期

关键词：

D O I：

10.1063/1.93534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：467 / 469

页数：3

共 14 条

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[2]

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[4]

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[7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP [J].

MCFEE, JH ;

MILLER, BI ;

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[8]

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[9]

Miller R, UNPUB

[10] MOLECULAR COMPOSITION OF ALKALI HALIDE VAPORS [J].

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