DEPENDENCE OF DOPING ON SUBSTRATE ORIENTATION FOR GAASC GROWN BY OMVPE

被引：17

作者：

CANEAU, C

BHAT, R

KOZA, MA

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 118卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(92)90097-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this letter, we report on the behavior of C doping in GaAs versus substrate orientation, in low pressure organometallic vapor phase epitaxy. The data confirm the previously observed trend of higher acceptor incorporation on A than on B type planes.

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页码：467 / 469

页数：3

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