CHARACTERIZATION OF IMPLANTATION AND ANNEALING OF ZN-IMPLANTED INP BY RAMAN-SPECTROMETRY

被引：37

作者：

BEDEL, E ^{[1
]}

LANDA, G ^{[1
]}

CARLES, R ^{[1
]}

RENUCCI, JB ^{[1
]}

ROQUAIS, JM ^{[1
]}

FAVENNEC, PN ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 06期

关键词：

D O I：

10.1063/1.337199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1980 / 1984

页数：5

共 21 条

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COMAS, J .

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[2]

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[3] LIGHT-SCATTERING FROM LASER ANNEALED ION-IMPLANTED SEMICONDUCTORS [J].

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KANELLIS, G .

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[4]

BARKER AS, 1975, REV MOD PHYS S2, V47

[5] RAMAN INVESTIGATION OF THE INP LATTICE-DYNAMICS [J].

BEDEL, E ;

LANDA, G ;

CARLES, R ;

REDOULES, JP ;

RENUCCI, JB .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (10) :1471-1479

[6]

Carles R., 1980, Journal of the Physical Society of Japan, V49, P665

[7] SPECTROSCOPIC ELLIPSOMETRY AND RAMAN-SCATTERING STUDY OF THE ANNEALING BEHAVIOR OF BE-IMPLANTED GAAS [J].

CHAMBON, P ;

ERMAN, M ;

THEETEN, JB ;

PREVOT, B ;

SCHWAB, C .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :390-392

[8] EXTREMELY RAPID OUT DIFFUSION OF SULFUR IN INP [J].

CHIN, AK ;

CAMLIBEL, I ;

SHENG, TT ;

BONNER, WA .

APPLIED PHYSICS LETTERS, 1983, 43 (05) :495-497

[9]

HARBEKE G, 1983, RCA REV, V44, P287

[10]

HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

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