3-DIMENSIONAL MONTE-CARLO SIMULATIONS .2. RECOIL PHENOMENA

被引：14
作者：
MAZZONE, AM
机构：
[1] CNR, Bologna, Italy, CNR, Bologna, Italy
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1985年 / 4卷 / 01期
关键词：
D O I：
10.1109/TCAD.1985.1270103
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
21
引用
收藏
页码：110 / 117
页数：8
相关论文
共 22 条
[1]   MONTE-CARLO SIMULATION OF ION-BEAM PENETRATION IN SOLIDS [J].
ADESIDA, I ;
KARAPIPERIS, L .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 61 (3-4) :223-233
[2]  
ALEXANDER RB, 1971, UKAEA AERE R6849 REP
[3]  
CARTER G, 1978, RADIAT EFF DEFECT S, V36, P1, DOI 10.1080/00337577808233164
[4]   RADIATION-DAMAGE IN SILICON PRODUCED BY PHOSPHORUS IMPLANTATION - RANDOM AND ALIGNED IMPLANTS [J].
CEMBALI, F ;
DORI, L ;
GALLONI, R ;
SERVIDORI, M ;
ZIGNANI, F .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (1-2) :111-117
[5]   RECOIL RANGE DISTRIBUTIONS IN MULTILAYERED TARGETS [J].
CHRISTEL, LA ;
GIBBONS, JF ;
MYLROIE, S .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :187-198
[6]  
CHRISTEL LA, 1981, NUCL I METH, P182
[7]   MONTE-CARLO CALCULATIONS ON SPATIAL-DISTRIBUTION OF IMPLANTED IONS IN SILICON [J].
DESALVO, A ;
ROSA, R .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 31 (01) :41-45
[8]   DOSE DEPENDENCE OF PENETRATION AND DAMAGE PROFILES OF P+-CHANNELED IONS IN SILICON SIMULATED BY COMPUTER [J].
DESALVO, A ;
ROSA, R ;
ZIGNANI, F .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 27 (1-2) :89-95
[9]   ION-BEAM INDUCED ATOMIC MIXING AT THE SIO2/SI INTERFACE STUDIED BY MEANS OF MONTE-CARLO SIMULATION [J].
FERRIEU, F .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 62 (3-4) :231-236
[10]  
HIRAO T, 1979, J APPL PHYS, V50
123