MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIMETHYLGALLIUM AS A GA SOURCE

被引：105

作者：

TOKUMITSU, E

KUDOU, Y

KONAGAI, M

TAKAHASHI, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 08期

关键词：

D O I：

10.1063/1.333344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3163 / 3165

页数：3

共 8 条

[1] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703

[2]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE) [J].

CHO, AY ;

BALLAMY, WC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :783-785

[4] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J].

DUCHEMIN, JP ;

BONNET, M ;

KOELSCH, F ;

HUYGHE, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) :1134-1149

[5]

FROLOV IA, 1977, INORG MATER+, V13, P632

[6]

LAYS MR, 1981, J CRYST GROWTH, V55, P145

[7] MOLECULAR-BEAM EPITAXY OF GAAS AND INP WITH GAS SOURCES FOR ARSINE AND P [J].

PANISH, MB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) :2729-2733

[8] METALORGANIC CVD OF GAAS IN A MOLECULAR-BEAM SYSTEM [J].

VEUHOFF, E ;

PLETSCHEN, W ;

BALK, P ;

LUTH, H .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :30-34

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