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CHARACTERIZATION OF ALUMINUM/LPCVD POLYSILICON SCHOTTKY-BARRIER DIODES
被引:1
作者
:
CHEN, DL
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,MELLON INST,PITTSBURGH,PA 15213
CARNEGIE MELLON UNIV,MELLON INST,PITTSBURGH,PA 15213
CHEN, DL
[
1
]
GREVE, DW
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,MELLON INST,PITTSBURGH,PA 15213
CARNEGIE MELLON UNIV,MELLON INST,PITTSBURGH,PA 15213
GREVE, DW
[
1
]
GUZMAN, AM
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,MELLON INST,PITTSBURGH,PA 15213
CARNEGIE MELLON UNIV,MELLON INST,PITTSBURGH,PA 15213
GUZMAN, AM
[
1
]
机构
:
[1]
CARNEGIE MELLON UNIV,MELLON INST,PITTSBURGH,PA 15213
来源
:
SOLID-STATE ELECTRONICS
|
1987年
/ 30卷
/ 03期
关键词
:
D O I
:
10.1016/0038-1101(87)90192-4
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:339 / 343
页数:5
相关论文
共 18 条
[1]
REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES
[J].
ANDREWS, JM
论文数:
0
引用数:
0
h-index:
0
ANDREWS, JM
;
LEPSELTER, MP
论文数:
0
引用数:
0
h-index:
0
LEPSELTER, MP
.
SOLID-STATE ELECTRONICS,
1970,
13
(07)
:1011
-+
[2]
ALUMINUM-SILICON SCHOTTKY BARRIERS AND OHMIC CONTACTS IN INTEGRATED-CIRCUITS
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
CARD, HC
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(06)
:538
-544
[3]
ON THE TRANSPORT-THEORY OF SCHOTTKY BARRIERS TO POLYCRYSTALLINE SILICON THIN-FILMS
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
;
HWANG, W
论文数:
0
引用数:
0
h-index:
0
HWANG, W
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(04)
:700
-705
[4]
INFLUENCE OF HYDROGEN IMPLANTATION ON THE RESISTIVITY OF POLYCRYSTALLINE SILICON
[J].
CHEN, DL
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV, MELLON INST, PITTSBURGH, PA 15213 USA
CARNEGIE MELLON UNIV, MELLON INST, PITTSBURGH, PA 15213 USA
CHEN, DL
;
GREVE, DW
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV, MELLON INST, PITTSBURGH, PA 15213 USA
CARNEGIE MELLON UNIV, MELLON INST, PITTSBURGH, PA 15213 USA
GREVE, DW
;
GUZMAN, AM
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV, MELLON INST, PITTSBURGH, PA 15213 USA
CARNEGIE MELLON UNIV, MELLON INST, PITTSBURGH, PA 15213 USA
GUZMAN, AM
.
JOURNAL OF APPLIED PHYSICS,
1985,
57
(04)
:1408
-1410
[5]
BEHAVIOR OF AL-SI SCHOTTKY-BARRIER DIODES UNDER HEAT-TREATMENT
[J].
CHINO, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEG & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NIPPON TELEG & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
CHINO, K
.
SOLID-STATE ELECTRONICS,
1973,
16
(01)
:119
-&
[6]
THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS
[J].
FOSSUM, JG
论文数:
0
引用数:
0
h-index:
0
FOSSUM, JG
;
LINDHOLM, FA
论文数:
0
引用数:
0
h-index:
0
LINDHOLM, FA
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(04)
:692
-700
[7]
HIGH-PERFORMANCE TRANSISTORS WITH ARSENIC-IMPLANTED POLYSIL EMITTERS
[J].
GRAUL, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
GRAUL, J
;
GLASL, A
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
GLASL, A
;
MURRMANN, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
MURRMANN, H
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1976,
11
(04)
:491
-495
[8]
ELECTRICAL PROPERTIES OF NICKEL-LOW-DOPED N-TYPE GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES
[J].
HACKAM, R
论文数:
0
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0
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0
HACKAM, R
;
HARROP, P
论文数:
0
引用数:
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0
HARROP, P
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(12)
:1231
-+
[9]
ARSENIC DOPANT INFLUENCE UPON THE SINTERING BEHAVIOR OF THE ALUMINUM-POLYSILICON INTERFACE
[J].
HERBOTS, N
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE,VIC 3001,AUSTRALIA
ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE,VIC 3001,AUSTRALIA
HERBOTS, N
;
VANDEWIELE, F
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE,VIC 3001,AUSTRALIA
ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE,VIC 3001,AUSTRALIA
VANDEWIELE, F
;
LOBET, M
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE,VIC 3001,AUSTRALIA
ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE,VIC 3001,AUSTRALIA
LOBET, M
;
ELLIMAN, RG
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE,VIC 3001,AUSTRALIA
ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE,VIC 3001,AUSTRALIA
ELLIMAN, RG
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(03)
:645
-652
[10]
HO CP, 1983, SEL83001 STANF U TEC
←
1
2
→
共 18 条
[1]
REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES
[J].
ANDREWS, JM
论文数:
0
引用数:
0
h-index:
0
ANDREWS, JM
;
LEPSELTER, MP
论文数:
0
引用数:
0
h-index:
0
LEPSELTER, MP
.
SOLID-STATE ELECTRONICS,
1970,
13
(07)
:1011
-+
[2]
ALUMINUM-SILICON SCHOTTKY BARRIERS AND OHMIC CONTACTS IN INTEGRATED-CIRCUITS
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
CARD, HC
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(06)
:538
-544
[3]
ON THE TRANSPORT-THEORY OF SCHOTTKY BARRIERS TO POLYCRYSTALLINE SILICON THIN-FILMS
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
;
HWANG, W
论文数:
0
引用数:
0
h-index:
0
HWANG, W
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(04)
:700
-705
[4]
INFLUENCE OF HYDROGEN IMPLANTATION ON THE RESISTIVITY OF POLYCRYSTALLINE SILICON
[J].
CHEN, DL
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV, MELLON INST, PITTSBURGH, PA 15213 USA
CARNEGIE MELLON UNIV, MELLON INST, PITTSBURGH, PA 15213 USA
CHEN, DL
;
GREVE, DW
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV, MELLON INST, PITTSBURGH, PA 15213 USA
CARNEGIE MELLON UNIV, MELLON INST, PITTSBURGH, PA 15213 USA
GREVE, DW
;
GUZMAN, AM
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV, MELLON INST, PITTSBURGH, PA 15213 USA
CARNEGIE MELLON UNIV, MELLON INST, PITTSBURGH, PA 15213 USA
GUZMAN, AM
.
JOURNAL OF APPLIED PHYSICS,
1985,
57
(04)
:1408
-1410
[5]
BEHAVIOR OF AL-SI SCHOTTKY-BARRIER DIODES UNDER HEAT-TREATMENT
[J].
CHINO, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON TELEG & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
NIPPON TELEG & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO,JAPAN
CHINO, K
.
SOLID-STATE ELECTRONICS,
1973,
16
(01)
:119
-&
[6]
THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS
[J].
FOSSUM, JG
论文数:
0
引用数:
0
h-index:
0
FOSSUM, JG
;
LINDHOLM, FA
论文数:
0
引用数:
0
h-index:
0
LINDHOLM, FA
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(04)
:692
-700
[7]
HIGH-PERFORMANCE TRANSISTORS WITH ARSENIC-IMPLANTED POLYSIL EMITTERS
[J].
GRAUL, J
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
GRAUL, J
;
GLASL, A
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
GLASL, A
;
MURRMANN, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER
MURRMANN, H
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1976,
11
(04)
:491
-495
[8]
ELECTRICAL PROPERTIES OF NICKEL-LOW-DOPED N-TYPE GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES
[J].
HACKAM, R
论文数:
0
引用数:
0
h-index:
0
HACKAM, R
;
HARROP, P
论文数:
0
引用数:
0
h-index:
0
HARROP, P
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(12)
:1231
-+
[9]
ARSENIC DOPANT INFLUENCE UPON THE SINTERING BEHAVIOR OF THE ALUMINUM-POLYSILICON INTERFACE
[J].
HERBOTS, N
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE,VIC 3001,AUSTRALIA
ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE,VIC 3001,AUSTRALIA
HERBOTS, N
;
VANDEWIELE, F
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE,VIC 3001,AUSTRALIA
ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE,VIC 3001,AUSTRALIA
VANDEWIELE, F
;
LOBET, M
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE,VIC 3001,AUSTRALIA
ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE,VIC 3001,AUSTRALIA
LOBET, M
;
ELLIMAN, RG
论文数:
0
引用数:
0
h-index:
0
机构:
ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE,VIC 3001,AUSTRALIA
ROYAL MELBOURNE INST TECHNOL,DEPT COMMUN & ELECTR ENGN,MELBOURNE,VIC 3001,AUSTRALIA
ELLIMAN, RG
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(03)
:645
-652
[10]
HO CP, 1983, SEL83001 STANF U TEC
←
1
2
→