CHARACTERIZATION OF ALUMINUM/LPCVD POLYSILICON SCHOTTKY-BARRIER DIODES

被引:1
作者
CHEN, DL [1 ]
GREVE, DW [1 ]
GUZMAN, AM [1 ]
机构
[1] CARNEGIE MELLON UNIV,MELLON INST,PITTSBURGH,PA 15213
关键词
D O I
10.1016/0038-1101(87)90192-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:339 / 343
页数:5
相关论文
共 18 条
[1]   REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES [J].
ANDREWS, JM ;
LEPSELTER, MP .
SOLID-STATE ELECTRONICS, 1970, 13 (07) :1011-+
[2]   ALUMINUM-SILICON SCHOTTKY BARRIERS AND OHMIC CONTACTS IN INTEGRATED-CIRCUITS [J].
CARD, HC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) :538-544
[3]   ON THE TRANSPORT-THEORY OF SCHOTTKY BARRIERS TO POLYCRYSTALLINE SILICON THIN-FILMS [J].
CARD, HC ;
HWANG, W .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :700-705
[4]   INFLUENCE OF HYDROGEN IMPLANTATION ON THE RESISTIVITY OF POLYCRYSTALLINE SILICON [J].
CHEN, DL ;
GREVE, DW ;
GUZMAN, AM .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1408-1410
[5]   BEHAVIOR OF AL-SI SCHOTTKY-BARRIER DIODES UNDER HEAT-TREATMENT [J].
CHINO, K .
SOLID-STATE ELECTRONICS, 1973, 16 (01) :119-&
[6]   THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS [J].
FOSSUM, JG ;
LINDHOLM, FA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :692-700
[7]   HIGH-PERFORMANCE TRANSISTORS WITH ARSENIC-IMPLANTED POLYSIL EMITTERS [J].
GRAUL, J ;
GLASL, A ;
MURRMANN, H .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (04) :491-495
[8]   ELECTRICAL PROPERTIES OF NICKEL-LOW-DOPED N-TYPE GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES [J].
HACKAM, R ;
HARROP, P .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (12) :1231-+
[9]   ARSENIC DOPANT INFLUENCE UPON THE SINTERING BEHAVIOR OF THE ALUMINUM-POLYSILICON INTERFACE [J].
HERBOTS, N ;
VANDEWIELE, F ;
LOBET, M ;
ELLIMAN, RG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) :645-652
[10]  
HO CP, 1983, SEL83001 STANF U TEC