VERTICAL CAVITY TOP-SURFACE EMITTING LASERS WITH THIN AG MIRRORS AND HYBRID REFLECTORS

被引：5

作者：

HONG, M ^{[1
]}

TU, LW ^{[1
]}

GAMELIN, J ^{[1
]}

WANG, YH ^{[1
]}

FISCHER, RJ ^{[1
]}

SCHUBERT, EF ^{[1
]}

TAI, K ^{[1
]}

HASNAIN, G ^{[1
]}

MANNAERTS, JP ^{[1
]}

WEIR, BE ^{[1
]}

WYNN, JD ^{[1
]}

KOPF, RF ^{[1
]}

ZYDZIK, GJ ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN,BERKELEY,CA 94720

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91131-S

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Three types of vertical cavity surface emitting lasers based on GaAs/AlGaAs have been grown by molecular beam epitaxy (MBE). The laser structures with top emission have been evolved from a simple double heterostructure (DH) with n-type distributed Bragg reflectors (DBR) as the bottom mirror and a semitransparent Ag as the top mirror, to a DH structure with a hybrid reflector consisting of a thin metal and a few pairs of p-DBR as the top mirror, and to a 3-QW structure again with a hybrid reflector as the top mirror. MBE growth of these three device structures is discussed, particularly on the in-situ growth of metals on GaAs. Devices have been fabricated and measured. A theoretical model has been used to gain an understanding of the parameters in each design. The MBE growth techniques have been improved to modify the heterostructural interface in the DBR to reduce the series resistance. The laser performance has been improved from a high threshold current in the first structure to a much lower threshold current in the second structure and finally to a cw room temperature operation with low threshold currents in the thrid structure.

引用

页码：1052 / 1056

页数：5

共 10 条

[1]

EITENNE P, 1989, APPL PHYS LETT, V55, P2239

[2]

HASNAIN G, IN PRESS ELECTRON LE

[3]

HONG MH, IN PRESS

[4] ROOM-TEMPERATURE CONTINUOUS WAVE LASING CHARACTERISTICS OF A GAAS VERTICAL CAVITY SURFACE-EMITTING LASER [J].