SURFACE ELECTRONIC-STRUCTURE OF GE(001)2 X-1 - EXPERIMENT AND THEORY

被引：55

作者：

LANDEMARK, E ^{[1
]}

UHRBERG, RIG ^{[1
]}

KRUGER, P ^{[1
]}

POLLMANN, J ^{[1
]}

机构：

[1] UNIV MUNSTER,INST THEORET PHYS 2,W-4400 MUNSTER,GERMANY

来源：

SURFACE SCIENCE | 1990年 / 236卷 / 03期

关键词：

D O I：

10.1016/0039-6028(90)90464-J

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Detailed studies of the surface electronic structure of Ge(001)2 × 1 have been performed with angle-resolved photoemission. Five surface structures are identified in the spectra and their initial-energy dispersions E(k∥) are presented along the [010] direction. Employing the local density approximation and Green's functions, the surface band structure along this direction has been calculated self-consistently for an asymmetric dimer model of the 2 × 1-reconstructed surface. Four of the five experimental surface structures are identified with calculated surface states or resonances, i.e. the dangling-bond state and two different back-bond resonances. Excellent agreement is obtained between the experimental and theoretical dispersions for these surface electronic bands. © 1990.

引用

页码：L359 / L364

页数：6

共 15 条

[1] AN OPTIMIZED BEAM LINE AND EXPERIMENTAL STATION FOR ANGLE RESOLVED PHOTOEMISSION BETWEEN 5 EV LESS-THAN-OR-EQUAL-TO HV LESS-THAN-OR-EQUAL-TO 50 EV [J].

FELDMANN, CA ;

ENGELHARDT, R ;

PERMIEN, T ;

KOCH, EE ;

SAILE, V .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 208 (1-3) :785-789

[2] SCANNING TUNNELING MICROSCOPY OF SI(001) [J].

HAMERS, RJ ;

TROMP, RM ;

DEMUTH, JE .

PHYSICAL REVIEW B, 1986, 34 (08) :5343-5357

[3] PHOTOELECTRON-SPECTROSCOPY OF SURFACE-STATES ON SEMICONDUCTOR SURFACES [J].

HANSSON, GV ;

UHRBERG, RIG .

SURFACE SCIENCE REPORTS, 1988, 9 (5-6) :197-292

[4] ANGLE-RESOLVED PHOTOEMISSION-STUDIES OF GE(001)-(2X1) [J].

HSIEH, TC ;

MILLER, T ;

CHIANG, TC .

PHYSICAL REVIEW B, 1984, 30 (12) :7005-7008

[5] MANY-BODY CALCULATION OF SURFACE-STATES - AS ON GE(111) [J].

HYBERTSEN, MS ;

LOUIE, SG .

PHYSICAL REVIEW LETTERS, 1987, 58 (15) :1551-1554

[6] THEORY OF QUASIPARTICLE SURFACE-STATES IN SEMICONDUCTOR SURFACES [J].

HYBERTSEN, MS ;

LOUIE, SG .

PHYSICAL REVIEW B, 1988, 38 (06) :4033-4044

[7]

JOHANSSON LSO, UNPUB PHYS REV B

[8] SCATTERING-THEORETICAL METHOD FOR SEMICONDUCTOR SURFACES - SELF-CONSISTENT FORMULATION AND APPLICATION TO SI(001)-(2X1) [J].

KRUGER, P ;

POLLMANN, J .

PHYSICAL REVIEW B, 1988, 38 (15) :10578-10599

[9] 1ST-PRINCIPLES ELECTRONIC-STRUCTURE THEORY FOR SEMI-INFINITE SEMICONDUCTORS WITH APPLICATIONS TO GE(001)(2X1) AND SI(001)(2X1) [J].

KRUGER, P ;

MAZUR, A ;

POLLMANN, J ;

WOLFGARTEN, G .

PHYSICAL REVIEW LETTERS, 1986, 57 (12) :1468-1471

[10] TUNNELING MICROSCOPY OF GE(001) [J].

KUBBY, JA ;

GRIFFITH, JE ;

BECKER, RS ;

VICKERS, JS .

PHYSICAL REVIEW B, 1987, 36 (11) :6079-6093

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