NEAR-SURFACE DEFECTS FORMED DURING RAPID THERMAL ANNEALING OF PREAMORPHIZED AND BF2+-IMPLANTED SILICON

被引：28
|
作者：
SANDS, T
WASHBURN, J
GRONSKY, R
MASZARA, W
SADANA, DK
ROZGONYI, GA
机构：
[1] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27650
[2] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27650
[3] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709
来源：
APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 09期
关键词：
D O I：
10.1063/1.95446
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：982 / 984
页数：3
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