NEAR-SURFACE DEFECTS FORMED DURING RAPID THERMAL ANNEALING OF PREAMORPHIZED AND BF2+-IMPLANTED SILICON

被引：28

作者：

SANDS, T

WASHBURN, J

GRONSKY, R

MASZARA, W

SADANA, DK

ROZGONYI, GA

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27650

[2] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27650

[3] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 09期

关键词：

D O I：

10.1063/1.95446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：982 / 984

页数：3

共 11 条

[1]

BENTON JL, 1982, 1981 LAS EL BEAM INT, P765

[2] RESIDUAL DEFECTS FOLLOWING RAPID THERMAL ANNEALING OF SHALLOW BORON AND BORON FLUORIDE IMPLANTS INTO PREAMORPHIZED SILICON [J].

CARTER, C ;

MASZARA, W ;

SADANA, DK ;

ROZGONYI, GA ;

LIU, J ;

WORTMAN, J .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :459-461

[3]

CROWDER BL, 1973, ION IMPLANTATION SEM, P257

[4] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON [J].

LIU, TM ;

OLDHAM, WG .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) :59-62

[5]

MASZARA W, 1983, NOV P MAT RES SOC EN

[6]

MULLER H, 1971, ION IMPLANTATION SEM, P85

[7]

SADANA DK, 1983, P I PHYS C SER, V67, P143

[8]

SADANA DK, 1977, ELECTRON LETT, V15, P615

[9]

SEIDEL TE, 1984, VLSI SCI TECHNOLOGY, V84, P201

[10] RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .1. ELECTRICAL-PROPERTIES OF SILICON IMPLANTED WITH BF2+ OR SI++B+ [J].

TSAI, MY ;

STREETMAN, BG .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :183-187

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