ANOMALOUS PUNCHTHROUGH IN ULSI BURIED-CHANNEL MOSFETS

[1] BELHADDAD H, 1985, JUN P NASE CODE 4, P193

[2] DEVICE DESIGN FOR THE SUBMICROMETER P-CHANNEL FET WITH N+ POLYSILICON GATE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) : 964 - 968

[3] Dennison C. H., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P204

[4] GERODOLLE A, 1987, TITAN4 2D PROCESS SI

[5] Nakahara M., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P238

[6] MODELING OF SUBSTRATE CURRENT IN PARA-MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) : 413 - 416

[7] A NEW PUNCHTHROUGH CURRENT MODEL BASED ON THE VOLTAGE-DOPING TRANSFORMATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 1076 - 1086

[8] ANALYTICAL STUDY OF PUNCHTHROUGH IN BURIED CHANNEL P-MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) : 690 - 705

[9] THE VOLTAGE-DOPING TRANSFORMATION - A NEW APPROACH TO THE MODELING OF MOSFET SHORT-CHANNEL EFFECTS [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (03) : 109 - 112

[10] Yanagisawa M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P132

[1] BELHADDAD H, 1985, JUN P NASE CODE 4, P193

[2] DEVICE DESIGN FOR THE SUBMICROMETER P-CHANNEL FET WITH N+ POLYSILICON GATE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) : 964 - 968

[3] Dennison C. H., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P204

[4] GERODOLLE A, 1987, TITAN4 2D PROCESS SI

[5] Nakahara M., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P238

[6] MODELING OF SUBSTRATE CURRENT IN PARA-MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) : 413 - 416

[7] A NEW PUNCHTHROUGH CURRENT MODEL BASED ON THE VOLTAGE-DOPING TRANSFORMATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 1076 - 1086

[8] ANALYTICAL STUDY OF PUNCHTHROUGH IN BURIED CHANNEL P-MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) : 690 - 705

[9] THE VOLTAGE-DOPING TRANSFORMATION - A NEW APPROACH TO THE MODELING OF MOSFET SHORT-CHANNEL EFFECTS [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (03) : 109 - 112

[10] Yanagisawa M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P132