EFFECTS OF ELLIPSOMETRIC PARAMETERS CAUSED BY HEAT-TREATMENT OF SILICON (111) SURFACE

被引:22
作者
KONO, S [1 ]
HANEKAMP, LJ [1 ]
VANSILFHOUT, A [1 ]
机构
[1] TWENTE UNIV TECHNOL,DEPT APPL PHYS,ENSCHEDE,NETHERLANDS
关键词
D O I
10.1016/0039-6028(77)90471-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:633 / 640
页数:8
相关论文
共 11 条
[1]   GENERAL TREATMENT OF EFFECT OF CELL WINDOWS IN ELLIPSOMETRY [J].
AZZAM, RMA ;
BASHARA, NM .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1971, 61 (06) :773-&
[2]   AUGER ELECTRON SPECTROSCOPY [J].
CHANG, CC .
SURFACE SCIENCE, 1971, 25 (01) :53-+
[3]  
DUSHMAN S, 1962, SCI F VACUUM TECHNIQ, P691
[4]   REMOVAL OF OXIDE-FILMS FROM SILICON SURFACES IN A HIGH-VACUUM SYSTEM - INSITU ELLIPSOMETRIC STUDY [J].
HOPPER, MA ;
CLARKE, RA ;
YOUNG, L .
SURFACE SCIENCE, 1976, 56 (01) :472-481
[5]   ELLIPSOMETRIC STUDY OF CLEANING SILICON BY ION-BOMBARDMENT AND HEATING IN VACUUM [J].
IBRAHIM, MM ;
BASHARA, NM .
SURFACE SCIENCE, 1972, 30 (03) :680-&
[6]   INFLUENCE OF SUBSTRATE SURFACE CONDITIONS ON NUCLEATION AND GROWTH OF EPITAXIAL SILICON FILMS [J].
JOYCE, BA ;
NEAVE, JH ;
WATTS, BE .
SURFACE SCIENCE, 1969, 15 (01) :1-&
[7]   ELLIPSOMETRIC INVESTIGATION OF CHEMISORPTION ON CLEAN SILICON (111) AND (100) SURFACES [J].
MEYER, F ;
BOOTSMA, GA .
SURFACE SCIENCE, 1969, 16 :221-&
[8]   ROUGH SILICON SURFACES STUDIED BY OPTICAL METHODS [J].
OHLIDAL, I ;
LUKES, F ;
NAVRATIL, K .
SURFACE SCIENCE, 1974, 45 (01) :91-116
[9]  
PALMBERG PW, 1972, HDB AUGER ELECTRON S
[10]   VACUUM THERMAL ETCHING OF GERMANIUM AND SILICON SURFACES [J].
RUSSELL, GJ ;
HANEMAN, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (04) :398-&