A KINETIC STUDY OF THE SYSTEM SI-SICL4

被引：11

作者：

MONCHAMP, RR

MCALEER, WJ

POLLAK, PI

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1964年 / 111卷 / 07期

关键词：

D O I：

10.1149/1.2426275

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：879 / 881

页数：3

共 10 条

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ING, S .

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[6]

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[7] UBER DAS REAKTIONSGLEICHGEWICHT SI+SICL4=2SICL2 UND DIE THERMOCHEMISCHEN EIGENSCHAFTEN DES GASFORMIGEN SILICIUM (II)-CHLORIDS [J].

SCHAFER, H ;

NICKL, J .

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[8]

STEINMAIER W, 1963, PHILIPS RES REP, V18, P75

[9] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1 [J].

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[10]

TUNG SK, 1961, METALLURGY SEMICONDU, V15, P87

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