CATHODOLUMINESCENCE OF VARIABLE-GAP SEMICONDUCTORS

被引：0
作者：
PEKA, GP
TOKALIN, OA
DRYAPIKO, NK
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1983年 / 17卷 / 06期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：683 / 685
页数：3
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共 14 条
[1]  
Artem'ev V. P., 1978, Soviet Physics - Solid State, V20, P171
[2]  
ARTEMEV VP, 1978, SOV PHYS SEMICOND+, V12, P356
[3]  
BAZYK AI, 1981, SOV PHYS SEMICOND+, V15, P786
[4]   EFFECT OF SURFACE SPACE-CHARGE REGION ON CATHODOLUMINESCENCE OF SEMICONDUCTORS [J].
DMITRUK, NL ;
LITOVCHENKO, VG ;
TALAT, GH .
SURFACE SCIENCE, 1978, 72 (02) :321-341
[5]   ANALYSIS OF EBIC CONSIDERING THE GENERATION DISTRIBUTION OF MINORITY-CARRIERS [J].
FUYUKI, T ;
MATSUNAMI, H ;
TANAKA, T .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (08) :1503-1510
[6]   DIRECT MEASUREMENT OF VERY SHORT MINORITY-CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS [J].
HACKETT, WH .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) :3249-&
[7]   APPLICATION OF SCANNING ELECTRON-MICROSCOPY TO DETERMINATION OF SURFACE RECOMBINATION VELOCITY - GAAS [J].
JASTRZEBSKI, L ;
LAGOWSKI, J ;
GATOS, HC .
APPLIED PHYSICS LETTERS, 1975, 27 (10) :537-539
[8]   PHOTO-LUMINESCENT METHODS FOR DETERMINATION OF GRADED BAND-GAP SEMICONDUCTOR PARAMETERS .1. ANALYSIS OF METHODS [J].
KOVALENKO, VF ;
PEKA, GP ;
SHEPEL, LG .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 65 (02) :529-534
[9]  
KOVALENKO VF, 1977, SOV PHYS SEMICOND+, V11, P1224
[10]  
KOVALENKO VF, 1978, SOV PHYS SEMICOND+, V12, P1099
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