GAAS/GAALAS SELECTIVE MOCVD EPITAXY AND PLANAR ION-IMPLANTATION TECHNIQUE FOR COMPLEX INTEGRATED OPTOELECTRONIC CIRCUIT APPLICATIONS

被引：16

作者：

KIM, ME

HONG, CS

KASEMSET, D

MILANO, RA

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 08期

关键词：

D O I：

10.1109/EDL.1984.25926

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：306 / 309

页数：4

共 9 条

[1]

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BARCHAIM, N ;

URY, I ;

YARIV, A .

IEEE SPECTRUM, 1982, 19 (05) :38-45

[3]

Carney J. K., 1982, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1982, P38

[4]

Dupuis R. D., 1979, Gallium Arsenide and Related Compounds 1978, P1

[5]

KOLBAS R, 1982, SPIE INTEGRATED OP 2, V321, P94

[6]

LEE, 1982, IEEE J SOLID STATE C, V17, P638

[7] HIGH-PERFORMANCE MODULATION-DOPED GAAS INTEGRATED-CIRCUITS WITH PLANAR STRUCTURES [J].

LEE, CP ;

WANG, WI .

ELECTRONICS LETTERS, 1983, 19 (05) :155-157

[8] GIGABIT LOGIC OPERATION WITH ENHANCEMENT-MODE GAAS-MESFET ICS [J].

MIZUTANI, T ;

KATO, N ;

OSAFUNE, K ;

OHMORI, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) :199-204

[9]

YAMAKOSHI S, 1983, 4TH INT C INT OPT OP, P140

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