A 4-STATE ROM USING MULTILEVEL PROCESS TECHNOLOGY

被引:20
作者
RICH, DA [1 ]
NAIFF, KLC [1 ]
SMALLEY, KG [1 ]
机构
[1] GEN INSTRUMENT CORP,DIV MICROELECTR,DESIGN ENGN,HICKSVILLE,NY 11802
关键词
D O I
10.1109/JSSC.1984.1052114
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:174 / 179
页数:6
相关论文
共 8 条
[1]   SOLID-STATE .1. VLSI-LSI [J].
BERNHARD, R .
IEEE SPECTRUM, 1981, 18 (01) :57-61
[2]   AN 8K EEPROM USING THE SIMOS STORAGE CELL [J].
GIEBEL, B .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (03) :311-315
[3]  
HODGES DA, 1980, ANALOG MOS INTEGRATE, P14
[4]  
LINEBACK JR, 1982, ELECTRONICS, V55, P81
[5]  
MEAD CA, 1980, INTRO VLSI SYSTEMS, pCH3
[6]  
SALSBURY PJ, 1977, ISSCC, P186
[7]   HIGH-PERFORMANCE NMOS OPERATIONAL-AMPLIFIER [J].
SENDEROWICZ, D ;
HODGES, DA ;
GRAY, PR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (06) :760-766