PASSIVATION OF PARAMAGNETIC SI-SIO2 INTERFACE STATES WITH MOLECULAR-HYDROGEN

被引：55
作者：
BROWER, KL
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 06期
关键词：
D O I：
10.1063/1.100620
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：508 / 510
页数：3
相关论文
共 21 条
[1]   EPR TECHNIQUES FOR STUDYING DEFECTS IN SILICON [J].
BROWER, KL .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1977, 48 (02) :135-141
[2]   STRUCTURAL FEATURES AT THE SI-SIO2 INTERFACE [J].
BROWER, KL .
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE, 1987, 151 :177-189
[3]   DIPOLAR INTERACTIONS BETWEEN DANGLING BONDS AT THE (111) SI-SIO2 INTERFACE [J].
BROWER, KL ;
HEADLEY, TJ .
PHYSICAL REVIEW B, 1986, 34 (06) :3610-3619
[4]   SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J].
BROWER, KL .
APPLIED PHYSICS LETTERS, 1983, 43 (12) :1111-1113
[5]  
BROWER KL, 1986, DEFECTS SEMICONDUCTO, P181
[6]   ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J].
CAPLAN, PJ ;
POINDEXTER, EH ;
DEAL, BE ;
RAZOUK, RR .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5847-5854
[7]   HYPERFINE INTERACTIONS OF THE PB CENTER AT THE SIO2 SI(111) INTERFACE [J].
COOK, M ;
WHITE, CT .
PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1741-1744
[8]   THEORY OF THE PB CENTER AT THE [111] SI/SIO2 INTERFACE [J].
EDWARDS, AH .
PHYSICAL REVIEW B, 1987, 36 (18) :9638-9648
[9]   TIME RESOLVED ANNEALING OF INTERFACE TRAPS IN POLYSILICON GATE METAL-OXIDE-SILICON CAPACITORS [J].
FISHBEIN, BJ ;
WATT, JT ;
PLUMMER, JD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) :674-681
[10]   DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES [J].
GRISCOM, DL .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2524-2533
123