ANOMALOUS HIGH ZERO BIAS RESISTANCE IN METAL - AMORPHOUS-SILICON - METAL STRUCTURES

被引：10

作者：

GAGE, SM ^{[1
]}

HAJTO, J ^{[1
]}

REYNOLDS, S ^{[1
]}

CHOI, WK ^{[1
]}

ROSE, MJ ^{[1
]}

LECOMBER, PG ^{[1
]}

SNELL, AJ ^{[1
]}

OWEN, AE ^{[1
]}

机构：

[1] UNIV DUNDEE,DEPT APPL PHYS & ELECTR & MFG ENGN,DUNDEE DD1 4HN,SCOTLAND

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 115卷 / 1-3期

关键词：

D O I：

10.1016/0022-3093(89)90395-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：171 / 173

页数：3

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[2] THE SWITCHING MECHANISM IN AMORPHOUS-SILICON JUNCTIONS [J].

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OWEN, AE ;

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HAJTO, J ;

SNELL, AJ ;

CHOI, WK ;

ROSE, MJ ;

REYNOLDS, S .

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[3]

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[4] NEW AMORPHOUS-SILICON ELECTRICALLY PROGRAMMABLE NON-VOLATILE SWITCHING DEVICE [J].

OWEN, AE ;

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SPEAR, WE .

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[5] BENT-BAND THEORY OF CONDUCTIVITY IN HEAVILY DOPED SEMICONDUCTORS AT LOW-TEMPERATURES [J].

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