INFLUENCE OF GROWTH-CONDITIONS ON UNDOPED AND SULFUR-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：11

作者：

ILIADIS, A ^{[1
]}

PRIOR, KA ^{[1
]}

STANLEY, CR ^{[1
]}

MARTIN, T ^{[1
]}

DAVIES, GJ ^{[1
]}

机构：

[1] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.337684

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：213 / 218

页数：6

共 21 条

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[2] THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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[3] THE INFLUENCE OF GROWTH-CONDITIONS ON SELENIUM INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1015 - 1021
[5] ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7214 - 7218
[6] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
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[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) : 2436 - 2448
[7] COMPOSITION EFFECTS IN THE GROWTH OF GA(IN)ASYP1-Y ALLOYS BY MBE
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[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (01) : 132 - 140
[8] EFFECT OF INP SUBSTRATE THERMAL-DEGRADATION ON MBE INGAAS LAYERS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 635 - 638
[9] GERMANIUM DOPING OF GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY SOME THERMODYNAMIC ASPECTS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) : 644 - 647
[10] SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GAAS .1. TELLURIUM DOPING
HURLE, DTJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (08) : 627 - 637

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