INFLUENCE OF GROWTH-CONDITIONS ON UNDOPED AND SULFUR-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY

被引：11

作者：

ILIADIS, A ^{[1
]}

PRIOR, KA ^{[1
]}

STANLEY, CR ^{[1
]}

MARTIN, T ^{[1
]}

DAVIES, GJ ^{[1
]}

机构：

[1] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.337684

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：213 / 218

页数：6

共 21 条

[1]

ALLSOP DWE, 1985, SEP EUR SOL STAT DEV

[2] THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ANDREWS, DA ;

HECKINGBOTTOM, R ;

DAVIES, GJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4421-4425

[3] THE INFLUENCE OF GROWTH-CONDITIONS ON SELENIUM INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ANDREWS, DA ;

KONG, MY ;

HECKINGBOTTOM, R ;

DAVIES, GJ .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :841-845

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN [J].

CHENG, KY ;

CHO, AY ;

WAGNER, WR ;

BONNER, WA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1015-1021

[5] ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

DAVIES, GJ ;

ANDREWS, DA ;

HECKINGBOTTOM, R .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7214-7218

[6] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS [J].

FARROW, RFC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) :2436-2448

[7] COMPOSITION EFFECTS IN THE GROWTH OF GA(IN)ASYP1-Y ALLOYS BY MBE [J].

FOXON, CT ;

JOYCE, BA ;

NORRIS, MT .

JOURNAL OF CRYSTAL GROWTH, 1980, 49 (01) :132-140

[8] EFFECT OF INP SUBSTRATE THERMAL-DEGRADATION ON MBE INGAAS LAYERS [J].

GENOVA, F ;

PAPUZZA, C ;

RIGO, C ;

STANO, S .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :635-638

[9] GERMANIUM DOPING OF GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY SOME THERMODYNAMIC ASPECTS [J].

HECKINGBOTTOM, R ;

DAVIES, GJ .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) :644-647

[10] SOLUBILITY AND POINT DEFECT DOPANT INTERACTIONS IN GAAS .1. TELLURIUM DOPING [J].

HURLE, DTJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (08) :627-637

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