SURFACE PASSIVATION OF IN0.52AL0.48AS USING (NH4)2SX AND P2S5/(NH4)2S

被引：17

作者：

YOSHIDA, N

TOTSUKA, M

INO, J

MATSUMOTO, S

机构：

[1] Department of Electrical Engineering, Keio University

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 3A期

关键词：

INALAS; (NH4)2SX; P2S5/(NH4)2S; X-RAY PHOTOELECTRON SPECTROSCOPY; LEAKAGE CURRENT; SCHOTTKY BARRIER HEIGHT;

D O I：

10.1143/JJAP.33.1248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

(NH4)2Sx and P2S5/(NH4)2S treatments were applied on In0.52Al0.48As surfaces. From X-ray photoelectron spectroscopy measurements, residual sulful atoms on the surface were found to form In-S, Al-S, and As-S bonds. The performance of Schottky diodes was improved by (NH4)2Sx and P2S5/(NH4)2S treatments in terms of the reverse leakage current and barrier height. In addition, the advantage of using P2S5/(NH4)2S was revealed compared with (NH4)2Sx.

引用

页码：1248 / 1252

页数：5

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