EPITAXIAL LEAD-ZIRCONATE-TITANATE THIN-FILMS ON SAPPHIRE

被引：37

作者：

BRAUN, W

KWAK, BS

ERBIL, A

BUDAI, JD

WILKENS, BJ

机构：

[1] GEORGIA INST TECHNOL,SCH PHYS,ATLANTA,GA 30332

[2] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

[3] BELL COMMUN RES INC,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.110026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pb(Zr1-xTix) O3 thin films covering the whole compositional range x = 0 to x = 1 have been grown for the first time on the sapphire (1102BAR) plane using the metalorganic chemical vapor deposition technique. The films are three-dimensionally epitaxial and exhibit single crystal properties. The structural transitions, examined by x-ray diffraction, are shifted slightly from the bulk single crystal values. Ferroelectric P-E hysteresis curves and the dielectric constant of the films were investigated using interdigitated electrodes fabricated by photolithography.

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页码：467 / 469

页数：3

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