YELLOW LIGHT (576NM) LASING EMISSION OF GAINP/ALLNP MULTIPLE QUANTUM-WELL LASERS PREPARED BY GAS-SOURCE-MOLECULAR-BEAM-EPITAXY

被引：14
作者：
KANEKO, Y
KIKUCHI, A
NOMURA, I
KISHINO, K
机构：
[1] Department of Electrical and Electronic Engineering, Sophia University, Tokyo, 7-1 Kioi-cho
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 10期
关键词：
Epitaxy and epitaxial growth; Lasers and laser applications;
D O I：
10.1049/el:19900430
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GalnP/AllnP MQW short-wavelength lasers with AHnP cladding layers were fabricated using a gas source molecular beam epitaxy (GSMBE) for the first time. The film thickness of the GalnP wells and AllnP barriers were 3 and 2nm, respectively. A yellow light lasing emission (576 nm) at 109 K was demonstrated by the MQW structure. © 1990, The Institution of Electrical Engineers. All rights reserved.
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页码：657 / 658
页数：2
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