A STUDY OF THE OMVPE GROWTH MECHANISMS USING INTERNAL REFLECTANCE SPECTROSCOPY TO EXAMINE ADSORPTION OF TMGA AND NH3 AND SURFACE-REACTIONS BETWEEN THEM

被引：26

作者：

TRIPATHI, A ^{[1
]}

MAZZARESE, D ^{[1
]}

CONNER, WC ^{[1
]}

JONES, KA ^{[1
]}

机构：

[1] SLCET EJ,ELECTR TECHNOL & DEVICES LAB,FOT MONMOUTH,NJ 07703

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 01期

关键词：

D O I：

10.1007/BF02655343

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：45 / 51

页数：7

共 33 条

[1] SURFACE BONDING OF THE NH3 AND NH2 SPECIES TO NI(110) [J].

ALVEY, MD ;

KLAUBER, C ;

YATES, JT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :1631-1632

[2] OMCVD GROWTH OF GAAS AND ALGAAS USING A SOLID AS SOURCE [J].

BHAT, R .

JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (04) :433-449

[3] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703

[4] USE OF TERTIARY-BUTYLPHOSPHINE FOR THE GROWTH OF INP AND GAAS1-XPX [J].

CHEN, CH ;

CAO, DS ;

STRINGFELLOW, GB .

JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (01) :67-73

[5]

COATES GE, 1951, CHEM SOC, P2003

[6]

DURIG JR, 1980, J CHEM PHYS, V72, P21

[7] STRUCTURE AND PROPERTIES OF AMORPHOUS SILICOALUMINAS .2. LEWIS AND BRONSTED ACID SITES [J].

FRIPIAT, JJ ;

LEONARD, A ;

UYTTERHO.JB .

JOURNAL OF PHYSICAL CHEMISTRY, 1965, 69 (10) :3274-&

[8] THE DECOMPOSITION OF AMMONIA ON THE FLAT (111) AND STEPPED (557) PLATINUM CRYSTAL-SURFACES [J].

GUTHRIE, WL ;

SOKOL, JD ;

SOMORJAI, GA .

SURFACE SCIENCE, 1981, 109 (02) :390-418

[9] THE MECHANISM OF THE GROWTH OF INP BY MOCVD - AN INVESTIGATION OF THE PYROLYSES OF SOME GROUP-III METAL-ORGANICS [J].

HAIGH, J ;

OBRIEN, S .

JOURNAL OF CRYSTAL GROWTH, 1984, 67 (01) :75-78

[10] VIBRATIONAL DEACTIVATION OF SURFACE OH CHEMISORBED ON SIO2 - SOLVENT EFFECTS [J].

HEILWEIL, EJ ;

CASASSA, MP ;

CAVANAGH, RR ;

STEPHENSON, JC .

JOURNAL OF CHEMICAL PHYSICS, 1985, 82 (11) :5216-5231

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