LOW-DIMENSIONAL HOPPING CONDUCTION IN POROUS AMORPHOUS-SILICON

被引：21

作者：

YAKIMOV, AI

STEPINA, NP

DVURECHENSKII, AV

SCHERBAKOVA, LA

机构：

[1] The Institute of Semiconductor Physics, 630090 Novosibirsk 90

来源：

PHYSICA B | 1995年 / 205卷 / 3-4期

关键词：

D O I：

10.1016/0921-4526(94)00911-E

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report measurements of the temperature, bias voltage and magnetic field dependence of the hopping conductivity in amorphous silicon exposed to anodic etching in aqueous HF solution (porous silicon). Our results indicate that this system possesses the properties of a one-dimensional system and a system with fractal dimension in different intervals of temperature.

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页码：298 / 304

页数：7

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