REAL-TIME OBSERVATIONS OF III-V GROWTH ON PATTERNED SUBSTRATES BY MU-RHEED

被引：9

作者：

ISU, T ^{[1
]}

MORISHITA, Y ^{[1
]}

GOTO, S ^{[1
]}

NOMURA, Y ^{[1
]}

KATAYAMA, Y ^{[1
]}

机构：

[1] OPTOELECTR TECHNOL RES LAB,TSUKUBA,IBARAKI 30026,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90765-O

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Scanning microprobe reflection high-energy electron diffraction (mu-RHEED) reveals microscopic surface features during MBE growth on a non-planar substrate. The Ga droplet formation and their movement were observed in GaAs growth with an alternating source supply on a vicinal plane. Appearance and development of additional facets on the edge of the mesa stripe were monitored during growth in real time. The growth front of the lateral epitaxy was observed, and it was found that the (311) facet was formed as a sidewall of a mesa stripe along the [011BAR] direction on the (111)B substrate. InAs hillock formation which depended on the line spacing of the stripe pattern of the substrate was observed on high-temperature substrates, and the real-time observation showed that the hillocks originated in the droplets on the surface.

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收藏

页码：942 / 948

页数：7

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