METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INAIP USING TERTIARYBUTYLPHOSPHINE

被引：2
作者：
HORI, H
KAWAKYU, Y
ISHIKAWA, H
MASHITA, M
机构：
[1] Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki, 210
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 8A期
关键词：
MOCVD; INAIP; TERTIARYBUTYLPHOSPHINE; PHOSPHORUS PRECURSOR; SURFACE MORPHOLOGY;
D O I：
10.1143/JJAP.30.L1343
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The InAlP growth by metalorganic chemical vapor deposition using tertiarybutylphosphine is reported for the first time. Films with mirrorlike surface morphology were obtained at 650-degrees-C. In comparison with phosphine, tertiarybutylphosphine is more suitable for growth at lower temperature.
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收藏
页码：L1343 / L1344
页数：2
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