TEMPERATURE-DEPENDENCE OF SINGLE-EVENT BURNOUT IN N-CHANNEL POWER MOSFETS

被引：47

作者：

JOHNSON, GH ^{[1
]}

SCHRIMPF, RD ^{[1
]}

GALLOWAY, KF ^{[1
]}

KOGA, R ^{[1
]}

机构：

[1] AEROSP CORP,LOS ANGELES,CA 90009

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 06期

关键词：

D O I：

10.1109/23.211342

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependence of single-event burn out (SEB) in n-channel power metal-oxide-semiconductor field effect transistors (MOSFETs) is investigated experimentally and analytically. Experimental data are presented which indicate that the SEB susceptibility of the power MOSFET decreases with increasing temperature. A previously reported analytical model that describes the SEB mechanism is updated to include temperature variations. This model is shown to agree with the experimental trends.

引用

页码：1605 / 1612

页数：8

共 9 条

[1] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].